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The methods included in this document are: a Voltage-Temperature Design Margins. b Voltage Interruptions and Transients. c Voltage Dropouts and Dips. d Current Draw Under a Number of Conditions. e Switch Input Noise These methods are best applied during the Development stage but can be used at all stages (e.g., Pre-Qualification, Qualification or Conformity).

The methods included in this document are: a Voltage-Temperature Design Margins. b Voltage Interruptions and Transients. c Voltage Dropouts and Dips. d Current Draw Under a Number of Conditions. e Switch Input Noise These methods are best applied during the Development stage but can be used at all stages (e.g. Pre-Qualification, Qualification or Conformity).

The methods included in this document are: a Voltage-Temperature Design Margins. b Voltage Interruptions and Transients. c Voltage Dropouts and Dips. d Current Draw Under a Number of Conditions. e Switch Input Noise These methods are best applied during the Development stage but can be used at all stages (e.g., Pre-Qualification, Qualification or Conformity).

This SAE Standard defines methods and apparatus to evaluate electronic devices for immunity to potential interference from conducted transients along battery feed or switched ignition inputs. Test apparatus specifications outlined in this procedure were developed for components installed in vehicles with 12-V systems (passenger cars and light trucks, 12-V heavy-duty trucks, and vehicles with 24-V systems). Presently, it is not intended for use on other input/output (I/O) lines of the device under test (DUT).

This SAE Standard defines methods and apparatus to evaluate electronic devices for immunity to potential interference from conducted transients along battery feed or switched ignition inputs. Test apparatus specifications outlined in this procedure were developed for components installed in vehicles with 12-V systems (passenger cars and light trucks, 12-V heavy-duty trucks, and vehicles with 24-V systems). Presently, it is not intended for use on other input/output (I/O) lines of the device under test (DUT).

This SAE Standard defines methods and apparatus to evaluate electronic devices for immunity to potential interference from conducted transients along battery feed or switched ignition inputs. Test apparatus specifications outlined in this procedure were developed for components installed in vehicles with 12-V systems (passenger cars and light trucks, 12-V heavy-duty trucks, and vehicles with 24-V systems). Presently, it is not intended for use on other input/output (I/O) lines of the device under test (DUT).

This SAE Standard defines methods and apparatus to evaluate electronic devices for immunity to potential interference from conducted transients along battery feed or switched ignition inputs. Test apparatus specifications outlined in this procedure were developed for components installed in vehicles with 12-V systems (passenger cars and light trucks, 12-V heavy-duty trucks, and vehicles with 24-V systems). Presently, it is not intended for use on other input/output (I/O) lines of the device under test (DUT).

This SAE Standard establishes a common basis for the evaluation of devices and equipment in vehicles against transient transmission by coupling via lines other than the power supply lines. The test demonstrates the immunity of the instrument, device, or equipment to coupled fast transient disturbances, such as those caused by switching of inductive loads, relay contact bouncing, etc. Four test methods are presented – Capacitive Coupling Clamp, Chattering Relay, Direct Capacitor Coupling, and Inductive Coupling Clamp.

This SAE Standard establishes test methods for the evaluation of devices and equipment in vehicles against transient transmission by coupling via lines other than the power supply lines. The test methods demonstrates the immunity of the instrument, device, or equipment to coupled fast transient disturbances, such as those caused by switching of inductive loads, relay contact bouncing, etc. Four test methods are presented in SAE J1113-12: the capacitive coupling clamp (CCC) method the direct capacitive coupling (DCC) method the inductive coupling clamp (ICC) method the capacitive/inductive coupling (CIC) method

This SAE Standard establishes test methods for the evaluation of devices and equipment in vehicles against transient transmission by coupling via lines other than the power supply lines. The test methods demonstrates the immunity of the instrument, device, or equipment to coupled fast transient disturbances, such as those caused by switching of inductive loads, relay contact bouncing, etc. Four test methods are presented in SAE J1113-12: the capacitive coupling clamp (CCC) method the direct capacitive coupling (DCC) method the inductive coupling clamp (ICC) method the capacitive/inductive coupling (CIC) method

This SAE Recommended Practice provides supporting information for the emission and immunity measurement procedures defined in the SAE J1752 series of documents.

This measurement procedure defines a method for measuring the electromagnetic radiation from an integrated circuit (IC). The IC being evaluated is mounted on an IC test printed circuit board (PCB) that is clamped to a mating port (referred to as a wall port) cut in the top or bottom of a TEM or wideband TEM (GTEM) cell. The test board is not in the cell as in the conventional usage but becomes a part of the cell wall. This method is applicable to any TEM or GTEM cell modified to incorporate the wall port; however, the measured RF voltage is affected by the septum to test board (wall) spacing. This procedure was developed using a 1 GHz TEM cell with a septum to wall spacing of 45 mm and a GTEM cell with average septum to wall spacing of 45 mm over the port area. Other cells may not produce identical spectral output but may be used for comparative measurements, subject to their frequency and sensitivity limitations.

This measurement procedure defines a method for measuring the electromagnetic radiation from an integrated circuit (IC). The IC being evaluated is mounted on an IC test printed circuit board (PCB) that is clamped to a mating port (referred to as a wall port) cut in the top or bottom of a TEM or wideband TEM (GTEM) cell. The test board is not in the cell as in the conventional usage but becomes a part of the cell wall. This method is applicable to any TEM or GTEM cell modified to incorporate the wall port; however, the measured RF voltage is affected by the septum to test board (wall) spacing. This procedure was developed using a 1 GHz TEM cell with a septum to wall spacing of 45 mm and a GTEM cell with average septum to wall spacing of 45 mm over the port area. Other cells may not produce identical spectral output but may be used for comparative measurements, subject to their frequency and sensitivity limitations.